| PART |
Description |
Maker |
| CZT7090L |
SMD Bipolar Power Transistor PNP Low VCE(SAT)
SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO
|
CENTRAL[Central Semiconductor Corp]
|
| TDA7910 TDB7910 |
MEDIUM POWER SINGLE BIPOLAR OPERATIONAL AMPLIFIER
|
STMICROELECTRONICS[STMicroelectronics]
|
| AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z)
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes
List of Unclassifed Manufacturers
|
| CHT5338ZPT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. Ltd.
|
| RM20TPM-H02 RM20TPM-H RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Rectifier Diodes, 800V
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RM30TPM-H02 RM30TB-M RM30TPM-H |
Rectifier Diodes, 800V
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SD2653 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
|
ROHM
|
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| QSX5 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
